introduction to gaas process products
ppa25: 0.25 µm power phemt process
process features：
- 0.25μm optical t-gate
- planarization process (ion implantation and isolation)
- double recess
- high-q passivation layer
- mim capacitor
- tan resistor（50ω/sq）
- gaas resistor
- air bridge
- backside via hole
- protection overcoat(pbo)
- operation up to vd=8v
classical technical parameters：
idss=360ma/mm，gm=450ms/mm，bvgd=18v，vth=-1.1v
- applicable to medium and small broadband and narrowband power amplifiers, able to realize multiple mmic
